LONGITUDINAL ANALYSIS OF SEMICONDUCTOR-LASERS WITH LOW REFLECTIVITY FACETS

被引：20
作者：
BAETS, R
VANDECAPELLE, JP
LAGASSE, PE
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期
关键词：
D O I：
10.1109/JQE.1985.1072696
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：693 / 699
页数：7
相关论文
共 20 条
[1]  
AGRAWAL GP, 1983, APPL PHYS LETT, V43
[2]   LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS [J].
ASBECK, PM ;
CAMMACK, DA ;
DANIELE, JJ ;
KLEBANOFF, V .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :727-733
[3]   LONGITUDINAL STATIC-FIELD MODEL FOR DH LASERS [J].
BAETS, R ;
LAGASSE, PE .
ELECTRONICS LETTERS, 1984, 20 (01) :41-42
[4]  
BAETS R, UNPUB COMP BEAM PROP
[5]  
Buus J., 1985, IEE Proceedings J (Optoelectronics), V132, P42, DOI 10.1049/ip-j.1985.0010
[6]   THE EFFECTIVE INDEX METHOD AND ITS APPLICATION TO SEMICONDUCTOR-LASERS [J].
BUUS, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) :1083-1089
[7]  
BUUS J, 1983, IEEE J QUANTUM ELECT, P953
[8]   HIGH-SPEED LASER MODULATION WITH INTEGRATED OPTICAL-INJECTION [J].
FEKETE, D ;
STREIFER, W ;
SCIFRES, DR ;
BURNHAM, RD .
APPLIED PHYSICS LETTERS, 1980, 37 (11) :975-978
[9]   CARRIER TRANSPORT IN DOUBLE-HETEROSTRUCTURE ACTIVE LAYERS [J].
JOYCE, WB .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7235-7239
[10]   FAR FIELD ASYMMETRY IN NARROW STRIPE GAIN-GUIDED LASERS [J].
KARDONTCHIK, JE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (08) :1287-1294
12