DRY ETCHING OF III-V SEMICONDUCTORS - INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE ANISOTROPY AND INDUCED DAMAGE

During reactive ion etching (RIE) of GaAs and InP with SiCl4, many different parameters will influence the etched profile. Among these process parameters, the substrate temperature is frequently neglected, but plays a very important role. While etching InP, not only the profile, but also the surface roughness is influenced. Beside geometrical effects, the optical and electrical damage for p and n-type GaAs, induced during RIE, is evaluated using photoluminescence and Schottky diode I-V and C-V measurements. SIMS was used to check for incorporation of plasma species. No great influence of the substrate heating on the damage was found. © 1990.