ANTIGUIDING INDEX PROFILES IN BROAD STRIPE SEMICONDUCTOR-LASERS FOR HIGH-POWER, SINGLE-MODE OPERATION

被引：10

作者：

CHAN, AK

LAI, CP

TAYLOR, HF

机构：

[1] Texas A&M Univ, College Station,, TX, USA, Texas A&M Univ, College Station, TX, USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 03期

关键词：

Manuscript received June 8; 1987; revised September 1; 1987. This work was supported in part by the Defense Advanced Research Projects Agency and by the U.S.N aval Research Laboratory. The authors are with the Department of Electrical Engineering; Texas A&M University; College Station; TX 77843. IEEE Log Number 8718524;

D O I：

10.1109/3.150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：489 / 495

页数：7

共 12 条

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[2] BOSATOV AP, 1980, SOV J QUANTUM ELECTR, V10, P620
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[8] UNSTABLE RESONATOR CAVITY SEMICONDUCTOR-LASERS
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[9] PHASE-LOCKED SEMICONDUCTOR-LASER ARRAY
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[10] EXPERIMENTAL AND ANALYTIC STUDIES OF COUPLED MULTIPLE STRIPE DIODE-LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (09) : 917 - 922

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