OXIDATION-KINETICS OF HOT-PRESSED SILICON-CARBIDE

被引:168
作者
SINGHAL, SC [1 ]
机构
[1] WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
关键词
D O I
10.1007/BF00545142
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1246 / 1253
页数:8
相关论文
共 18 条
[2]   ACTIVE TO PASSIVE TRANSITION IN OXIDATION OF SIC [J].
ANTILL, JE ;
WARBURTON, JB .
CORROSION SCIENCE, 1971, 11 (06) :337-+
[3]   HOT-PRESSING OF SILICON-CARBIDE WITH 1 PERCENT BORON-CARBIDE ADDITION [J].
BIND, JM ;
BIGGERS, JV .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1975, 58 (7-8) :304-306
[4]  
BURKE JJ, 1974, CERAMICS HIGH PERFOR
[5]   OXIDATION BEHAVIOR OF SILICON CARBIDE [J].
ERVIN, G .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (09) :347-352
[6]   HIGH-TEMPERATURE OXIDATION, REDUCTION, AND VOLATILIZATION REACTIONS OF SILICON AND SILICON-CARBIDE [J].
GULBRANSEN, EA ;
JANSSON, SA .
OXIDATION OF METALS, 1972, 4 (03) :181-+
[7]   EFFECTS OF OXYGEN PARTIAL PRESSURE ON THE OXIDATION OF SILICON CARBIDE [J].
JORGENSEN, PJ ;
WADSWORTH, ME ;
CUTLER, IB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1960, 43 (04) :209-212
[8]   OXIDATION OF SILICON CARBIDE [J].
JORGENSEN, PJ ;
WADSWORTH, ME ;
CUTLER, IB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (12) :613-616
[9]  
KOSSOWSKY R, 1975, GRAIN BOUNDARIES ENG, P275
[10]   HOT-PRESSING BEHAVIOR OF SILICON-CARBIDE POWDERS WITH ADDITIONS OF ALUMINUM-OXIDE [J].
LANGE, FF .
JOURNAL OF MATERIALS SCIENCE, 1975, 10 (02) :314-320