NEUTRON-INDUCED EFFECTS IN SEMICONDUCTORS

被引：6
作者：
PENHALE, LG
机构：
来源：
INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES | 1963年 / 14卷 / 06期
关键词：
D O I：
10.1016/0020-708X(63)90004-8
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：305 / &
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