Application of secondary electron imaging to dopant profiling of semiconductors

被引:0
|
作者
Venables, D
Maher, DM
机构
来源
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Doping-dependent contrast in secondary electron images of p/n junctions in silicon was observed and characterized. Secondary electron contrast profiles of in-situ boron doped epitaxial silicon structures showed an excellent correlation with spreading resistance and SIMS profiles. The magnitude of the contrast scaled with carrier concentration and the precision in locating the abrupt p(+)/n junctions was approximately 10 nm. The sensitivity of the technique extends to a carrier concentration of similar to 10(16) cm(-3) under optimum conditions. This phenomenon is employed to extract two-dimensional dopant profiles of suitable test structures.
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页码:605 / 608
页数:4
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