BI THIN-FILM GROWTH STRUCTURES PREPARED AT 30-K ON GAAS(110) AND INP(110)

被引：14
作者：
PATRIN, JC
LI, YZ
CHANDER, M
WEAVER, JH
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期
关键词：
D O I：
10.1116/1.578412
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Orientationally ordered epitaxial thin films of Bi have been grown on GaAs(110) and InP(110) at deposition temperatures of 30 K. These semimetal films grow in triple layers with pseudocubic {110} planes parallel to the substrate. Growth at 30 K produced metastable flat films whereas deposition at 300 K produced more three-dimensional films. This demonstrates that the growth mode can be selected by changing the growth temperature. The pseudocubic [100] directions of the Bi overlayers on GaAs(110) and InP(110) were rotated by +/- 10-degrees and +/- 7-degrees from the substrate [110BAR] directions. The surface of these metastable overlayers contains superstructures which are modeled as a Moire effect between the overlayer and substrate lattice.
引用
收藏
页码：2073 / 2077
页数：5
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