VARIBAND GAAS(1-X)PX - A MATERIAL FOR PRESSURE SENSORS

被引:2
作者
GRIDCHIN, VA
PUCKLYAKOV, YA
SHURMAN, LB
机构
[1] Department of Applied and Theoretical Physics, Novosibirsk Institute of Electrical Engineering, Novosibirsk
关键词
D O I
10.1016/0924-4247(92)80208-K
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Variband GaAs(1-x)Px has been used for creating a compact hydrostatic pressure sensor. The optimal phosphorus distribution profile in gallium arsenide-phosphide along the thickness of the resistor enables the temperature sensitivity of the output signal to be minimized in the temperature range 250-550 K.
引用
收藏
页码:139 / 142
页数:4
相关论文
共 3 条