A VERY HIGH-SENSITIVITY PHOTOTRANSISTOR STRUCTURE

被引：3
作者：
NISHIZAWA, J [1 ]
NONAKA, K [1 ]
TAMAMUSHI, T [1 ]
机构：
[1] SEMICOND RES INST,KAWAUCHI,SENDAI 980,JAPAN
来源：
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1985年 / 6卷 / 08期
关键词：
D O I：
10.1007/BF01011944
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
27
引用
收藏
页码：649 / 673
页数：25
相关论文
共 31 条
[1]  
BARNARD JA, 1981, 1981 P GAAS REL COMP
[2]  
BERNARD JA, 1982, IEEE T ELECTRON DEVI, V29, P1396
[3]   THE PERMEABLE BASE TRANSISTOR AND ITS APPLICATION TO LOGIC-CIRCUITS [J].
BOZLER, CO ;
ALLEY, GD .
PROCEEDINGS OF THE IEEE, 1982, 70 (01) :46-52
[4]   THEORY OF A MODULATED BARRIER PHOTO-DIODE [J].
CHEN, CY .
APPLIED PHYSICS LETTERS, 1981, 39 (12) :979-981
[5]   MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J].
CHEN, CY ;
CHO, AY ;
GARBINSKI, PA ;
BETHEA, CG ;
LEVINE, BF .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :340-342
[6]  
CHEN CY, 1981, 5TH C VAP GROWTH EP
[7]  
CHEN CY, 1981, IEEE ELECTRON DEVICE, V2, P293
[8]  
GEORGOULAS N, 1982, IEEE ELECTR DEVICE L, V3, P61
[9]  
KROEMER H, 1983, J VAC SCI TECHNOL B, V1
[10]  
KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P499
1234