HIGH-SENSITIVITY LOW DARK CURRENT 10-MU-M GAAS QUANTUM-WELL INFRARED PHOTODETECTORS

被引：304

作者：

LEVINE, BF

BETHEA, CG

HASNAIN, G

SHEN, VO

PELVE, E

ABBOTT, RR

HSIEH, SJ

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 09期

关键词：

D O I：

10.1063/1.102682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By increasing the quantum well barrier width, we have dramatically reduced the tunneling dark current by an order of magnitude and thereby significantly increased the blackbody detectivity DBB*. For a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm, we have achieved DBB * =1.0×1010 cm √Hz/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.

引用

收藏

页码：851 / 853

页数：3

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