ON A NEW TYPE OF QUANTUM SUPERLATTICE

The electron movement in a thin semiconductor layer adjoining the semiconductor-insulator interface in a metal-insulator-semiconductor (MIS) microstructure with periodic field electrodes is considered. If a voltage of sufficiently high frequency is applied to such a structure the effect of this high-frequency field on the charge carriers in the semiconductor is in a sense equivalent to the effect of a time-independent effective potential that is a sequence of deep "dynamical" quantum wells where the charge carriers are localized. It is shown that electron resonant tunneling may occur in this structure. © 1990.