THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS

被引：83

作者：

LIPARI, NO

ALTARELLI, M

机构：

[1] XEROX CORP, WEBSTER RES CTR, ROCHESTER, NY 14644 USA

[2] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA

[3] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.15.4883

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4883 / 4895

页数：13

共 47 条

[1]

ABGYAN SA, 1965, FIZ TVERD TELA+, V6, P2266

[2] INDIRECT EXCITON DISPERSION AND LINE-SHAPE IN GE [J].

ALTARELLI, M ;

LIPARI, NO .

PHYSICAL REVIEW LETTERS, 1976, 36 (11) :619-622

[3]

ALTARELLI M, 1976, 13 P INT C PHYS SEM

[4]

ALTARELLI M, UNPUBLISHED

[5] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].

BALDERES.A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1974, 9 (04) :1525-1539

[6] DIRECT EXCITON SPECTRUM IN DIAMOND AND ZINC-BLENDE SEMICONDUCTORS [J].

BALDERES.A ;

LIPARI, NO .

PHYSICAL REVIEW LETTERS, 1970, 25 (06) :373-&

[7] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+

[8] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709

[9]

BUCHANAN M, 1976, 13 P INT C PHYS SEM

[10]

CAPIZZI M, TO BE PUBLISHED

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