THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS

被引：83

作者：

LIPARI, NO

ALTARELLI, M

机构：

[1] XEROX CORP, WEBSTER RES CTR, ROCHESTER, NY 14644 USA

[2] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA

[3] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.15.4883

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4883 / 4895

页数：13

共 47 条

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[2] INDIRECT EXCITON DISPERSION AND LINE-SHAPE IN GE
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[3] ALTARELLI M, 1976, 13 P INT C PHYS SEM
[4] ALTARELLI M, UNPUBLISHED
[5] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES
BALDERES.A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1525 - 1539
[6] DIRECT EXCITON SPECTRUM IN DIAMOND AND ZINC-BLENDE SEMICONDUCTORS
BALDERES.A
LIPARI, NO
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (06) : 373 - &
[7] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 439 - +
[8] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709
[9] BUCHANAN M, 1976, 13 P INT C PHYS SEM
[10] CAPIZZI M, TO BE PUBLISHED