NEW FLOATING-GATE ALGAAS/GAAS MEMORY DEVICES WITH GRADED-GAP ELECTRON INJECTOR AND LONG RETENTION TIMES

被引：28
作者：
CAPASSO, F
BELTRAM, F
MALIK, RJ
WALKER, JF
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 08期
关键词：
D O I：
10.1109/55.749
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：377 / 379
页数：3
相关论文
共 11 条
[1]  
BELTRAM F, 1988, IN PRESS APPL P 0801
[2]   A THERMAL-GENERATION-LIMITED BURIED-WELL STRUCTURE FOR ROOM-TEMPERATURE GAAS DYNAMIC RAMS [J].
DUNGAN, TE ;
COOPER, JA ;
MELLOCH, MR .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :243-245
[3]  
FORREST SR, 1987, HETEROJUNCTION BAND, P363
[4]   FAST SWITCHING AND STORAGE IN GAAS-ALXGA1-XAS HETEROJUNCTION LAYERS [J].
KEEVER, M ;
HESS, K ;
LUDOWISE, M .
ELECTRON DEVICE LETTERS, 1982, 3 (10) :297-300
[5]   HOT-ELECTRON INJECTION DEVICES [J].
LURYI, S ;
KASTALSKY, A .
SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (05) :389-400
[6]   HOT-ELECTRON MEMORY EFFECT IN DOUBLE-LAYERED HETEROSTRUCTURES [J].
LURYI, S ;
KASTALSKY, A ;
GOSSARD, AC ;
HENDEL, R .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1294-1296
[7]   EFFECT OF A BURIED SUPERLATTICE ON THE DYNAMIC STORAGE OF ELECTRONS AT THE ALGAAS/GAAS HETEROJUNCTION [J].
MELLOCH, MR ;
QIAN, QD ;
COOPER, JA .
APPLIED PHYSICS LETTERS, 1987, 50 (23) :1657-1659
[8]   LONG-TERM STORAGE OF INVERSION HOLES AT A SUPERLATTICE/GAAS INTERFACE [J].
MELLOCH, MR ;
QIAN, QD ;
COOPER, JA .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1471-1472
[9]  
Nicollian E. H., 1982, METAL OXIDE SEMICOND
[10]  
Sze S. M, 1981, PHYS SEMICONDUCTOR D, P496
12