IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS

被引：44

作者：

HOLLIS, MA

PALMATEER, SC

EASTMAN, LF

DANDEKAR, NV

SMITH, PM

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 12期

关键词：

D O I：

10.1109/EDL.1983.25795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：440 / 443

页数：4

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