IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS

被引：44
|
作者：
HOLLIS, MA
PALMATEER, SC
EASTMAN, LF
DANDEKAR, NV
SMITH, PM
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
[2] GE,ELECTR LAB,SYRACUSE,NY 13221
来源：
IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 12期
关键词：
D O I：
10.1109/EDL.1983.25795
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：440 / 443
页数：4
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