IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS

被引：44

作者：

HOLLIS, MA

PALMATEER, SC

EASTMAN, LF

DANDEKAR, NV

SMITH, PM

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 12期

关键词：

D O I：

10.1109/EDL.1983.25795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：440 / 443

页数：4

共 23 条

[1] GAAIAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

ANKRI, D ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1982, 18 (17) :750-751

[2] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE [J].

AWANO, Y ;

TOMIZAWA, K ;

HASHIZUME, N ;

KAWASHIMA, M .

ELECTRONICS LETTERS, 1982, 18 (03) :133-135

[3]

BLATT FJ, 1968, PHYSICS ELECTRONIC C

[4] ONSET OF DIFFUSION-DRIFT EMISSION REGIME AND THE TRANSITION FROM EXPONENTIAL TO LINEAR CURRENT-VOLTAGE CHARACTERISTIC OF TRIANGULAR BARRIER SEMICONDUCTOR STRUCTURES [J].

BUOT, FA ;

KRUMHANSL, JA ;

SOCHA, JB .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :814-816

[5] QUANTUM-MECHANICAL REFLECTION AT TRIANGULAR PLANAR-DOPED POTENTIAL BARRIERS FOR TRANSISTORS [J].

CHANDRA, A ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9165-9169

[6]

HESS K, 1980, PHYSICS NONLINEAR TR

[7]

HOLLIS MA, 1983, THESIS CORNELL U ITH

[8]

KASIYAN AI, 1981, SOV PHYS SEMICOND+, V15, P1142

[9] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].

KAZARINOV, RF ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :810-812

[10] ELECTRON-SCATTERING INTERACTION WITH COUPLED PLASMON-POLAR-PHONON MODES IN DEGENERATE SEMICONDUCTORS [J].

KIM, ME ;

DAS, A ;

SENTURIA, SD .

PHYSICAL REVIEW B, 1978, 18 (12) :6890-6899

← 1 2 3 →