共 50 条
- [31] NEGATIVE TRANSCONDUCTANCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (11): : 2376 - 2380
- [34] REALIZATION OF GAALAS/GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS I2L INTEGRATED-CIRCUITS JOURNAL DE PHYSIQUE III, 1991, 1 (04): : 557 - 567
- [36] COMPARISON OF ECL GATE PERFORMANCES USING DIFFERENT HETEROJUNCTION BIPOLAR-TRANSISTORS PROCESS JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 575 - 578
- [38] RADIATION HARDNESS CHARACTERISTICS OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 155 - 158
- [39] THERMAL EFFECTS AND INSTABILITIES IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 165 - 170