THEORETICAL-STUDY OF THE ECL INVERTER WITH GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:1
|
作者
TASSELLI, J
CAZARRE, A
BAILBE, JP
MARTY, A
REY, G
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1988年 / 23卷 / 06期
关键词
D O I
10.1051/rphysap:019880023060111700
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1117 / 1125
页数:9
相关论文
共 50 条
  • [1] EMITTER EXCESS RESISTANCE IN GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    CAMPS, T
    MARTY, A
    TASSELLI, J
    CAZARRE, A
    BAILBE, JP
    SOLID-STATE ELECTRONICS, 1994, 37 (12) : 1907 - 1911
  • [2] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    ASBECK, PM
    MILLER, DL
    ASATOURIAN, R
    KIRKPATRICK, CG
    ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406
  • [3] GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - ISSUES AND PROSPECTS FOR APPLICATION
    ASBECK, PM
    CHANG, MCF
    HIGGINS, JA
    SHENG, NH
    SULLIVAN, GJ
    WANG, KC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2032 - 2042
  • [4] ELECTRICAL BEHAVIOR OF DOUBLE HETEROJUNCTION NPN GAALAS/GAAS/GAALAS BIPOLAR-TRANSISTORS
    BAILBE, JP
    MARTY, A
    REY, G
    TASSELLI, J
    BOUYAHYAOUI, A
    SOLID-STATE ELECTRONICS, 1985, 28 (06) : 627 - 638
  • [5] FABRICATION AND DC CHARACTERIZATION OF GAALAS/GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS
    MARTY, A
    JAMAI, J
    VANNEL, JP
    FABRE, N
    BAILBE, JP
    DUHAMEL, N
    DUBONCHEVALLIER, C
    TASSELLI, J
    SOLID-STATE ELECTRONICS, 1988, 31 (09) : 1375 - 1382
  • [6] VERIFICATION OF THE CHARGE-CONTROL MODEL FOR GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    TASSELLI, J
    MARTY, A
    BAILBE, JP
    REY, G
    SOLID-STATE ELECTRONICS, 1986, 29 (09) : 919 - 923
  • [7] GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH CUTOFF FREQUENCIES ABOVE 10 GHZ
    ASBECK, PM
    MILLER, DL
    PETERSEN, WC
    KIRKPATRICK, CG
    ELECTRON DEVICE LETTERS, 1982, 3 (12): : 366 - 368
  • [8] A BROAD-BAND AMPLIFIER USING GAAS/GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    TOPHAM, PJ
    LONG, AP
    SAUL, PH
    PARTON, JG
    HOLLIS, BA
    HIAMS, NA
    GOODFELLOW, RC
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (03) : 686 - 689
  • [9] ANALYSIS OF DC CHARACTERISTICS OF GAALAS-GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS
    ANKRI, D
    AZOULAY, R
    CAQUOT, E
    DANGLA, J
    DUBON, C
    PALMIER, JF
    SOLID-STATE ELECTRONICS, 1986, 29 (02) : 141 - 149
  • [10] GAALAS/GAAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD
    GLEW, RW
    FROST, MS
    JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 450 - 452