共 50 条
- [41] OSCILLATIONS IN A HOT-CARRIER P-N-JUNCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 389 - 392
- [42] INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1874 - L1876
- [43] BOUNDARY-LAYER IN P-N-JUNCTION THEORY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 784 - 786
- [44] ON THEORY OF RECOMBINATIONAL RADIATION OF P-N-JUNCTION IN SEMICONDUCTORS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (04): : 24 - +
- [45] A PHOTOELECTRIC METHOD FOR MEASURING THE DEPTH OF A P-N-JUNCTION SOVIET MICROELECTRONICS, 1982, 11 (02): : 84 - 90
- [48] SOME PROPERTIES OF P-N-JUNCTION IN SELENIUM MONOCRYSTAL RADIOTEKHNIKA I ELEKTRONIKA, 1972, 17 (01): : 199 - +
- [49] THE RESPONSE OF P-N-JUNCTION DETECTOR TO BACKSCATTERED ELECTRONS SCANNING ELECTRON MICROSCOPY, 1983, : 1547 - 1553
- [50] SLOW RELAXATION OF THE VOLTAGE ACROSS A P-N-JUNCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 260 - 262