ANGULAR-DEPENDENCE OF BACKSCATTERING YIELD FROM SI CRYSTALS IN DOUBLE AND SINGLE ALIGNMENT

被引：20
作者：
MORITA, K
机构：
[1] UNIV MUNICH,SEKT PHYS,MUNICH,FED REP GER
[2] UNIV NAGOYA,FAC ENGN,DEPT NUCL ENGN,NAGOYA,JAPAN
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 28卷 / 1-2期
关键词：
D O I：
10.1080/00337577608233029
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：65 / 75
页数：11
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