PARAMAGNETISM OF PHOSPHORUS DOPED SILICON IN NON-METALLIC IMPURITY CONDUCTION

被引：6
|
作者：
MAEKAWA, S
UE, H
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1967年 / 22卷 / 06期
关键词：
D O I：
10.1143/JPSJ.22.1401
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1401 / &
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