PARAMAGNETISM OF PHOSPHORUS DOPED SILICON IN NON-METALLIC IMPURITY CONDUCTION

被引：6

作者：

MAEKAWA, S

UE, H

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1967年 / 22卷 / 06期

关键词：

D O I：

10.1143/JPSJ.22.1401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1401 / &

共 9 条

[1]

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[3]

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[4]

MAEKAWA S, 1966, P INT C SEMICONDUCTO

[5] ELECTRON SPIN RESONANCE IN A SILICON SEMICONDUCTOR [J].

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[6] MAGNETIC ANOMALY IN METALLIC IMPURITY CONDUCTION [J].

SASAKI, W ;

MAEKAWA, S ;

KINOSHITA, J .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) :928-+

[7]

SEITZ F, 1962, SOLID STATE PHYSI ED, V13, P233

[8] MAGNETISM OF INTERACTING DONORS [J].

SONDER, E ;

SCHWEINLER, HC .

PHYSICAL REVIEW, 1960, 117 (05) :1216-1221

[9] ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES [J].

YAMANOUCHI, C ;

MIZUGUCHI, K ;

SASAKI, W .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) :859-+

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