OPTICAL CHARACTERIZATION OF GAAS LAYERS GROWN ON GE SUBSTRATES

被引：9
作者：
KASANO, H [1 ]
HOSOKI, S [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期
关键词：
D O I：
10.1149/1.2134134
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：112 / 118
页数：7
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