THEORY OF THE GAINAS/ALINAS-DOPED QUANTUM-WELL APD - A NEW LOW-NOISE SOLID-STATE PHOTODETECTOR FOR LIGHTWAVE COMMUNICATION-SYSTEMS

被引：30

作者：

BRENNAN, K ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1683 / 1695

页数：13

相关论文

共 45 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8775 - 8792
[2] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[3] HOT-ELECTRON TRANSPORT IN IN0.53GA0.47AS
AHMED, SR
NAG, BR
ROY, MD
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (12) : 1193 - 1197
[4] [Anonymous], 1977, SEMICONDUCTORS SEMIM
[5] SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES
BLAUVELT, H
MARGALIT, S
YARIV, A
[J]. ELECTRONICS LETTERS, 1982, 18 (09) : 375 - 376
[6] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS
BRENNAN, K
HESS, K
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (04) : 347 - 357
[7] THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN GAAS AND INP
BRENNAN, K
HESS, K
[J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5581 - 5590
[8] THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES
BRENNAN, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2197 - 2205
[9] THEORETICAL-STUDY OF MULTIQUANTUM WELL AVALANCHE PHOTODIODES MADE FROM THE GAINAS ALINAS MATERIAL SYSTEM
BRENNAN, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1502 - 1510
[10] BRENNAN K, 1985, 2ND INT C YAM PHYS M

← 1 2 3 4 5 →