HETEROGENEOUS KINETICS AND MASS-TRANSFER IN CHEMICAL VAPOR-DEPOSITION PROCESSES .3. THE ROTATING-DISK REACTOR

被引：25

作者：

HITCHMAN, ML ^{[1
]}

CURTIS, BJ ^{[1
]}

机构：

[1] RCA LABS LTD, BADENERSTR 569, CH-8048 ZURICH, SWITZERLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 60卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90171-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：43 / 56

页数：14

共 25 条

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[8] SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .2. OXYGEN-CONTENT [J].

HITCHMAN, ML ;

WIDMER, AE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :501-509

[9] SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .1. GROWTH-KINETICS [J].

HITCHMAN, ML ;

KANE, J .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :485-500

[10] CONSIDERATION OF THE EFFECT OF THE THERMAL-BOUNDARY LAYER ON CVD GROWTH-RATES [J].

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