首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
HETEROGENEOUS KINETICS AND MASS-TRANSFER IN CHEMICAL VAPOR-DEPOSITION PROCESSES .3. THE ROTATING-DISK REACTOR
被引:25
作者
:
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD, BADENERSTR 569, CH-8048 ZURICH, SWITZERLAND
RCA LABS LTD, BADENERSTR 569, CH-8048 ZURICH, SWITZERLAND
HITCHMAN, ML
[
1
]
CURTIS, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD, BADENERSTR 569, CH-8048 ZURICH, SWITZERLAND
RCA LABS LTD, BADENERSTR 569, CH-8048 ZURICH, SWITZERLAND
CURTIS, BJ
[
1
]
机构
:
[1]
RCA LABS LTD, BADENERSTR 569, CH-8048 ZURICH, SWITZERLAND
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1982年
/ 60卷
/ 01期
关键词
:
D O I
:
10.1016/0022-0248(82)90171-3
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:43 / 56
页数:14
相关论文
共 25 条
[1]
EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(12)
: 1510
-
1511
[2]
KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION
BYLANDER, EG
论文数:
0
引用数:
0
h-index:
0
BYLANDER, EG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(12)
: 1171
-
1175
[3]
The flow due to a rotating disc.
Cochran, WG
论文数:
0
引用数:
0
h-index:
0
Cochran, WG
[J].
PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY,
1934,
30
: 365
-
375
[4]
GLANG R, 1962, AIME, V15, P27
[5]
HARBEKE G, UNPUB
[6]
Hitchman M. L., 1977, PHYSICOCHEMICAL HYDR, V2
[7]
POLYSILICON GROWTH-KINETICS IN A LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratories RCA Ltd., Zurich
HITCHMAN, ML
KANE, J
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratories RCA Ltd., Zurich
KANE, J
WIDMER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratories RCA Ltd., Zurich
WIDMER, AE
[J].
THIN SOLID FILMS,
1979,
59
(02)
: 231
-
247
[8]
SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .2. OXYGEN-CONTENT
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
HITCHMAN, ML
WIDMER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
WIDMER, AE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(03)
: 501
-
509
[9]
SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .1. GROWTH-KINETICS
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
HITCHMAN, ML
KANE, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
KANE, J
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(03)
: 485
-
500
[10]
CONSIDERATION OF THE EFFECT OF THE THERMAL-BOUNDARY LAYER ON CVD GROWTH-RATES
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LTD,LABS,CH-8048 ZURICH,SWITZERLAND
RCA LTD,LABS,CH-8048 ZURICH,SWITZERLAND
HITCHMAN, ML
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
48
(03)
: 394
-
402
←
1
2
3
→
共 25 条
[1]
EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(12)
: 1510
-
1511
[2]
KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION
BYLANDER, EG
论文数:
0
引用数:
0
h-index:
0
BYLANDER, EG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(12)
: 1171
-
1175
[3]
The flow due to a rotating disc.
Cochran, WG
论文数:
0
引用数:
0
h-index:
0
Cochran, WG
[J].
PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY,
1934,
30
: 365
-
375
[4]
GLANG R, 1962, AIME, V15, P27
[5]
HARBEKE G, UNPUB
[6]
Hitchman M. L., 1977, PHYSICOCHEMICAL HYDR, V2
[7]
POLYSILICON GROWTH-KINETICS IN A LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratories RCA Ltd., Zurich
HITCHMAN, ML
KANE, J
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratories RCA Ltd., Zurich
KANE, J
WIDMER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratories RCA Ltd., Zurich
WIDMER, AE
[J].
THIN SOLID FILMS,
1979,
59
(02)
: 231
-
247
[8]
SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .2. OXYGEN-CONTENT
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
HITCHMAN, ML
WIDMER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
WIDMER, AE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(03)
: 501
-
509
[9]
SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .1. GROWTH-KINETICS
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
HITCHMAN, ML
KANE, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND
KANE, J
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(03)
: 485
-
500
[10]
CONSIDERATION OF THE EFFECT OF THE THERMAL-BOUNDARY LAYER ON CVD GROWTH-RATES
HITCHMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LTD,LABS,CH-8048 ZURICH,SWITZERLAND
RCA LTD,LABS,CH-8048 ZURICH,SWITZERLAND
HITCHMAN, ML
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
48
(03)
: 394
-
402
←
1
2
3
→