共 50 条
- [41] TEMPERATURE-DEPENDENCE OF HOLE SATURATION VELOCITY IN SILICON APPLIED PHYSICS, 1974, 3 (05): : 431 - 432
- [43] TEMPERATURE-DEPENDENCE OF ELECTRONIC PROPERTIES OF INTRINSIC SILICON ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1977, 32 (07): : 746 - 749
- [44] TEMPERATURE-DEPENDENCE OF DIAMAGNETIC AND DIELECTRIC SUSCEPTIBILITY OF SILICON PHYSICAL REVIEW B, 1977, 16 (06): : 2657 - 2662
- [46] TEMPERATURE-DEPENDENCE OF PHOTODEGRADATION IN AMORPHOUS HYDROGENATED SILICON APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 46 (01): : 5 - 8
- [47] ON THE TEMPERATURE-DEPENDENCE OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON JOURNAL DE PHYSIQUE, 1986, 47 (02): : 171 - 173
- [49] TEMPERATURE-DEPENDENCE OF MOBILITY GAP IN AMORPHOUS SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 335 - 335
- [50] TEMPERATURE-DEPENDENCE OF PHONON PHONON INTERACTION IN SILICON JOURNAL DE PHYSIQUE, 1981, 42 (NC6): : 134 - 136