FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY

被引:34
作者
KAGAWA, T
MATSUMOTO, N
KUMABE, K
机构
来源
PHYSICAL REVIEW B | 1983年 / 28卷 / 08期
关键词
D O I
10.1103/PhysRevB.28.4570
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4570 / 4578
页数:9
相关论文
共 24 条
[1]   PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712
[2]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[3]  
COLLINS PW, 1982, PHYSREV B, V25, P5762
[4]   ESTIMATION OF LOCALIZED STATE DISTRIBUTION PROFILES IN UNDOPED AND DOPED A-SI-H BY MEASURING SPACE-CHARGE-LIMITED CURRENT [J].
FURUKAWA, S ;
KAGAWA, T ;
MATSUMOTO, N .
SOLID STATE COMMUNICATIONS, 1982, 44 (06) :927-930
[5]   ESTIMATION METHODS FOR LOCALIZED-STATE DISTRIBUTION PROFILES IN UNDOPED AND PHOSPHOROUS-DOPED A-SI-H [J].
FURUKAWA, S ;
MATSUMOTO, N .
PHYSICAL REVIEW B, 1983, 27 (08) :4955-4960
[6]   DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
HVAM, JM ;
BRODSKY, MH .
PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374
[7]   THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H [J].
JACKSON, WB ;
THOMPSON, MJ .
PHYSICA B & C, 1983, 117 (MAR) :883-885
[8]   THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J].
JONES, DI ;
COMBER, PGL ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :541-551
[9]   AMORPHOUS-SILICON PHOTOCONDUCTIVE SENSOR [J].
KAGAWA, T ;
MATSUMOTO, N ;
KUMABE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :251-256
[10]   EFFECT OF RECOMBINATION ON TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H [J].
KAGAWA, T ;
FURUKAWA, S ;
MATSUMOTO, N .
PHYSICAL REVIEW B, 1982, 26 (08) :4714-4716