MECHANISM OF RF SPIKE BURN-OUT IN SCHOTTKY-BARRIER MICROWAVE MIXERS

被引:10
|
作者
GERZON, PH
BARNES, JW
WAITE, DW
NORTHROP, DC
机构
[1] MULLARD LTD,HAZEL GROVE,STOCKPORT,CHESHIRE,ENGLAND
[2] UNIV MANCHESTER,INST SCI & TECHNOL,MANCHESTER,ENGLAND
关键词
D O I
10.1016/0038-1101(75)90089-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:343 / &
相关论文
共 50 条
  • [21] HOT-ELECTRON EFFECTS IN SCHOTTKY-BARRIER MIXERS AT HIGH-FREQUENCIES
    BEARD, SJ
    REES, HD
    ELECTRONICS LETTERS, 1981, 17 (21) : 811 - 812
  • [22] INFLUENCE OF A PASSIVATION TREATMENT ON THE BURN-OUT MECHANISM ON INP
    PARGUEL, V
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1986, 41 (231): : 207 - 208
  • [23] Microwave assisted burn-out of organic compounds in ceramic systems
    Leonelli, C
    Pellacani, GC
    Siligardi, C
    Veronesi, P
    EURO CERAMICS VIII, PTS 1-3, 2004, 264-268 : 739 - 742
  • [25] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR
    DRANGEID, KE
    JAGGI, R
    MIDDLEHO.S
    MOHR, T
    MOSER, A
    SASSO, G
    SOMMERHALDER, R
    WOLF, P
    ELECTRONICS LETTERS, 1968, 4 (17) : 362 - +
  • [26] RF SPUTTERED GOLD-AMORPHOUS SILICON SCHOTTKY-BARRIER DIODES
    XU, L
    REINHARD, DK
    THOMPSON, MG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 1004 - 1008
  • [27] Effect of Passivation Treatment on the Burn-Out Mechanism in InP.
    Parguel, V.
    1600, (41):
  • [28] Binder burn-out in a controlled single-mode microwave cavity
    Michigan State Univ, East Lansing, United States
    Scripta Mater, 1 (107-111):
  • [29] Binder burn-out in a controlled single-mode microwave cavity
    Lee, KY
    Case, ED
    Asmussen, J
    Siegel, M
    SCRIPTA MATERIALIA, 1996, 35 (01) : 107 - 111
  • [30] EVAPORATION MECHANISM AND BURN-OUT PHENOMENON IN LIQUID METAL COOLING
    KOTTOWSK.H
    GRASS, G
    BRENNSTOFF-WARME-KRAFT, 1968, 20 (02): : 85 - &