MECHANISM OF RF SPIKE BURN-OUT IN SCHOTTKY-BARRIER MICROWAVE MIXERS

被引：10

作者：

GERZON, PH

BARNES, JW

WAITE, DW

NORTHROP, DC

机构：

[1] MULLARD LTD,HAZEL GROVE,STOCKPORT,CHESHIRE,ENGLAND

[2] UNIV MANCHESTER,INST SCI & TECHNOL,MANCHESTER,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(75)90089-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：343 / &

共 11 条

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ANAND, Y ;

MORONEY, WJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1182-+

[2]

ANAND Y, 1970, MICROWAVES, V9, P36

[3]

BROWN WD, 1972, IEEE T NUCL SCI, VNS19, P68

[4]

HALFORD GJ, PRIVATE COMMUNICATIO

[5] LOW-NOISE GAAS SCHOTTKY-BARRIER BEAM-LEAD MIXER DIODES [J].

IIZUKA, H ;

KITAOKA, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (09) :1372-&

[6]

MCMURRAY LR, 1972, IEEE T NUCL SCI, VNS19, P76

[7]

MORONEY WJ, 1972, 10TH P ANN C REL PHY, P57

[8]

SMITH JS, 1971, 9 ANN P REL PHYS IEE

[9]

SWALLOW GH, 1973, 3 P EUR MICR C BRUSS, V1

[10]

TORREY HC, 1948, CRYSTAL RECTIFIERS, P240