ENHANCED CRYSTALLINITY OF LOW-TEMPERATURE-DEPOSITED SILICON FILMS ON GRAPHITE SUBSTRATES

被引:8
作者
CHANG, CA
SIEKHAUS, WJ
机构
[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB,DIV ENERGY & ENVIRONM,BERKELEY,CA 94720
关键词
D O I
10.1063/1.88996
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:208 / 210
页数:3
相关论文
共 7 条
[1]   AUGER ANALYSIS OF SILICON THIN-FILMS DEPOSITED ON CARBON AT HIGH-TEMPERATURES [J].
CHANG, CA ;
SIEKHAUS, WJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3402-3407
[2]   ENHANCED CRYSTALLINITY OF SILICON FILM DEPOSITED AT LOW-TEMPERATURE [J].
CHANG, CA ;
SIEKHAUS, WJ ;
KAMINSKA, T ;
HUO, DTC .
APPLIED PHYSICS LETTERS, 1975, 26 (04) :178-180
[3]  
CHANG CC, UNPUBLISHED
[4]   SOLID-PHASE EPITAXIAL STUDIES USING VACUUM DEPOSITION ON HEATED SILICON SUBSTRATES [J].
DAVEY, JE ;
CHRISTOU, A ;
DAY, HM .
APPLIED PHYSICS LETTERS, 1976, 28 (07) :365-367
[5]  
Hultgren RR, 1973, SELECTED VALUES THER
[6]   REACTION BETWEEN SILICA AND ALUMINUM [J].
PRABRIPUTALOONG, K ;
PIGGOTT, MR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) :430-434
[7]  
SPACE RI, 1960, P C SILICON CARBIDE