NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS

被引:19
作者
FAHRNER, WR [1 ]
SCHNEIDER, CP [1 ]
机构
[1] IBM CORP, SYST PROD DIV, E FISHKILL FACIL, Hopewell Jct, NY 12533 USA
关键词
D O I
10.1149/1.2132738
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:100 / 105
页数:6
相关论文
共 8 条
[3]  
HUANG JST, 1970, P IEEE, V58, P1489
[4]   DETERMINATION OF MINORITY CARRIER LIFETIME AND SURFACE RECOMBINATION VELOCITY FROM TRANSIENT-RESPONSE OF MOS CAPACITORS [J].
KANO, Y ;
SHIBATA, A .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) :1161-+
[5]   ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J].
SCHRODER, DK ;
NATHANSON, HC .
SOLID-STATE ELECTRONICS, 1970, 13 (05) :577-+
[6]   MEASURING LIFETIME OF MINORITY CARRIERS IN MIS STRUCTURES [J].
TOMANEK, P .
SOLID-STATE ELECTRONICS, 1969, 12 (04) :301-+
[7]  
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
[8]  
TN102 PRINC APPL RES