ON SIMULATION OF RESIST PROFILES IN ELECTRON-BEAM LITHOGRAPHY

被引：1
作者：
DESHMUKH, PR
RAJA, NKL
KHOKLE, WS
机构：
来源：
MICROELECTRONICS AND RELIABILITY | 1988年 / 28卷 / 02期
关键词：
D O I：
10.1016/0026-2714(88)90355-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：223 / 228
页数：6
相关论文
共 50 条
[31]   DEVELOPMENT OF POSITIVE ELECTRON-BEAM RESIST FOR 50 KV ELECTRON-BEAM DIRECT-WRITING LITHOGRAPHY [J].
SAKAMIZU, T ;
YAMAGUCHI, H ;
SHIRAISHI, H ;
MURAI, F ;
UENO, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2812-2817
[32]   Electron-beam lithography simulation for maskmaking, part IV: Effect of resist contrast on isofocal dose [J].
Sauer, C ;
Mack, CA .
PHOTOMASK AND X-RAY MASK TECHNOLOGY VI, 1999, 3748 :27-40
[33]   EXPERIMENTAL AND THEORETICAL-STUDY OF CROSS-SECTIONAL PROFILES OF RESIST PATTERNS IN ELECTRON-BEAM LITHOGRAPHY [J].
MURATA, K ;
NOMURA, E ;
NAGAMI, K ;
KATO, T ;
NAKATA, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1734-1738
[34]   CHARGING EFFECTS ON TRILEVEL RESIST AND METAL LAYER IN ELECTRON-BEAM LITHOGRAPHY [J].
ITOH, H ;
NAKAMURA, K ;
HAYAKAWA, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3039-3042
[35]   PROXIMITY EXPOSURE COMPENSATION AND RESIST DEBRIS FORMATION IN ELECTRON-BEAM LITHOGRAPHY [J].
DESHMUKH, PR ;
SINGH, M ;
RANGRA, KJ ;
VYAS, PD ;
KHOKLE, WS ;
PAL, BB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01) :179-182
[36]   RESIST CONTRAST ENHANCEMENT IN HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY [J].
CHIONG, KG ;
ROTHWELL, MB ;
WIND, S ;
BUCCHIGNANO, J ;
HOHN, FJ ;
KVITEK, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1771-1777
[37]   CONDUCTIVE 2-LAYER RESIST SYSTEM FOR ELECTRON-BEAM LITHOGRAPHY [J].
TODOKORO, Y ;
KAJIYA, A ;
WATANABE, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :357-360
[38]   Nanoscale resist morphologies of dense gratings using electron-beam lithography [J].
Mohammad, M. A. ;
Dew, S. K. ;
Westra, K. ;
Li, P. ;
Aktary, M. ;
Lauw, Y. ;
Kovalenko, A. ;
Stepanova, M. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (03) :745-753
[39]   A NOVEL SILICON CONTAINING CHEMICAL AMPLIFICATION RESIST FOR ELECTRON-BEAM LITHOGRAPHY [J].
WATANABE, H ;
TODOKORO, Y ;
INOUE, M .
MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) :69-72
[40]   CALCULATION OF A PROXIMITY RESIST HEATING IN VARIABLY SHAPED ELECTRON-BEAM LITHOGRAPHY [J].
NAKAJIMA, K ;
AIZAKI, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2784-2788
12345