MICROTWIN NUCLEATION AND PROPAGATION IN HETEROEPITAXIAL II-VI COMPOUNDS ON (001)-ORIENTED GAAS SUBSTRATES

被引：18

作者：

BROWN, PD

LOGINOV, YY

STOBBS, WM

HUMPHREYS, CJ

机构：

[1] Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB2 3QZ, Pembroke Street

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1995年 / 72卷 / 01期

关键词：

D O I：

10.1080/01418619508239581

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

II-VI(001)GaAs heterostructures showing strong microtwin anisotropy for conditions of tensile and compressive strain are examined. Epitaxial ZnS/GaAs, (Cd,Zn)Te/GaAs and (Cd,Zn)S/GaAs exhibit microtwins exclusively for the [1 (1) over bar 0] projection, when far from the interface, indicating that a growth model is most appropriate for the description of microtwin propagation in these cases. Profile imaging is used to examine the first stages of twinning in (Hg,Mn)Te. The importance of interface integrity when distinguishing between processes of growth- and deformation-induced microtwinning is emphasized.

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页码：39 / 57

页数：19

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