FORMATION AND CHARACTERIZATION OF GAAS QUANTUM WIRES AT GIANT STEP EDGES ON VICINAL (110)GAAS SURFACES

被引：46

作者：

TAKEUCHI, M

SHIBA, K

SATO, K

HUANG, HK

INOUE, K

NAKASHIMA, H

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8B期

关键词：

QUANTUM WIRE; MOLECULAR BEAM EPITAXY; (110) GAAS; VICINAL SUBSTRATE; ATOMIC FORCE MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; POLARIZATION;

D O I：

10.1143/JJAP.34.4411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the formation of GaAs quantum wires using giant step structure formed during molecular beam epitaxial growth of AlGaAs on vicinal (110) GaAs surfaces. Atomic force microscope observation indicates that the steps extend to over several mu m and are coherently aligned. The growth of an AlGaAs/GaAs quantum well (QWL) on the giant step structure forms quantum wires (QWRs) along the step edges. Carrier confinement into the QWRs is caused by the increase of well width (well-width modulation) and the decrease of Al composition in the AlGaAs barriers (barrier-compositional modulation), which are confirmed by transmission electron microscope observation. Redshift and strong polarization parallel to the wire direction in the photoluminescence spectra support carrier confinement into the GaAs QWRs.

引用

页码：4411 / 4413

页数：3

共 14 条

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