FORMATION AND CHARACTERIZATION OF GAAS QUANTUM WIRES AT GIANT STEP EDGES ON VICINAL (110)GAAS SURFACES

被引：46

作者：

TAKEUCHI, M

SHIBA, K

SATO, K

HUANG, HK

INOUE, K

NAKASHIMA, H

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8B期

关键词：

QUANTUM WIRE; MOLECULAR BEAM EPITAXY; (110) GAAS; VICINAL SUBSTRATE; ATOMIC FORCE MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; POLARIZATION;

D O I：

10.1143/JJAP.34.4411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the formation of GaAs quantum wires using giant step structure formed during molecular beam epitaxial growth of AlGaAs on vicinal (110) GaAs surfaces. Atomic force microscope observation indicates that the steps extend to over several mu m and are coherently aligned. The growth of an AlGaAs/GaAs quantum well (QWL) on the giant step structure forms quantum wires (QWRs) along the step edges. Carrier confinement into the QWRs is caused by the increase of well width (well-width modulation) and the decrease of Al composition in the AlGaAs barriers (barrier-compositional modulation), which are confirmed by transmission electron microscope observation. Redshift and strong polarization parallel to the wire direction in the photoluminescence spectra support carrier confinement into the GaAs QWRs.

引用

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页码：4411 / 4413

页数：3

相关论文

共 14 条

[1] INGAAS/INP QUANTUM-WELLS WITH THICKNESS MODULATION [J].

BRASIL, MJSP ;

BERNUSSI, AA ;

COTTA, MA ;

MARQUEZINI, MV ;

BRUM, JA ;

HAMM, RA ;

CHU, SNG ;

HARRIOTT, LR ;

TEMKIN, H .

APPLIED PHYSICS LETTERS, 1994, 65 (07) :857-859

[2] FORMATION AND PHOTOLUMINESCENCE CHARACTERIZATION OF QUANTUM-WELL WIRES USING MULTIATOMIC STEPS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

HARA, S ;

ISHIZAKI, J ;

MOTOHISA, J ;

FUKUI, T ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :692-697

[3] FORMATION OF QUANTUM-WELL WIRE-LIKE STRUCTURES BY MBE GROWTH OF ALGAAS/GAAS SUPERLATTICES ON GAAS (110) SURFACES [J].

HASEGAWA, S ;

SATO, M ;

MAEHASHI, K ;

ASAHI, H ;

NAKASHIMA, H .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :371-375

[4] STEP STRUCTURES DURING MBE GROWTH OF GAAS AND ALGAAS FILMS ON VICINAL GAAS(110) SURFACES INCLINED TOWARD (111)B [J].

HASEGAWA, S ;

KIMURA, K ;

SATO, M ;

MAEHASHI, K ;

NAKASHIMA, H .

SURFACE SCIENCE, 1992, 267 (1-3) :5-7

[5] FORMATION AND PHOTOLUMINESCENCE OF QUANTUM WIRE STRUCTURES ON VICINAL (110) GAAS SUBSTRATES BY MBE [J].

INOUE, K ;

KIMURA, K ;

MAEHASHI, K ;

HASEGAWA, S ;

NAKASHIMA, H ;

IWANE, M ;

MATSUDA, O ;

MURASE, K .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :1041-1044

[6] COMPOSITION MODULATION IN QUANTUM-WIRE STRUCTURES ON VICINAL (110)GAAS STUDIED BY PHOTOLUMINESCENCE [J].

INOUE, K ;

HUANG, HK ;

TAKEUCHI, M ;

KIMURA, K ;

NAKASHIMA, H ;

IWANE, M ;

MATSUDA, O ;

MURASE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :1342-1344

[7] LINEAR-POLARIZATION EFFECTS IN (110) QUANTUM-WELLS FOR LIGHT PROPAGATING PERPENDICULAR TO THE WELL PLANES [J].

KAJIKAWA, Y ;

HATA, M ;

ISU, T ;

KATAYAMA, Y .

SURFACE SCIENCE, 1992, 267 (1-3) :501-504

[8] PERIODIC FACETING ON VICINAL GAAS(110) SURFACES DURING EPITAXIAL-GROWTH [J].

KRISHNAMURTHY, M ;

WASSERMEIER, M ;

WILLIAMS, DRM ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 62 (16) :1922-1924

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10] THEORY OF LUMINESCENCE POLARIZATION ANISOTROPY IN QUANTUM WIRES [J].

MCINTYRE, CR ;

SHAM, LJ .

PHYSICAL REVIEW B, 1992, 45 (16) :9443-9446