THE DEPOSITION AND CHARACTERIZATION OF BETA-SIC AND DIAMOND BETA-SIC COMPOSITE FILMS

被引：18
|
作者：
JIANG, X
KLAGES, CP
机构：
[1] Fraunhofer-Institut für Schicht- und Oberflächentechnik (FhG-IST), W-2000 Hamburg 54
来源：
DIAMOND AND RELATED MATERIALS | 1993年 / 2卷 / 2-4期
关键词：
D O I：
10.1016/0925-9635(93)90113-G
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cubic silicon carbide (beta-SiC) was deposited by a microwave plasma assisted chemical vapor deposition (MWCVD) process, using a hydrogen-tetramethylsilane (TMS) gas mixture. The conditions for preparing beta-SiC correspond well with those for diamond deposition. The necessary silicon content in the gas phase for a beta-SiC growth rate comparable with normal diamond deposition is only 1% of the carbon required for diamond growth. Based on this knowledge a method for preparing diamond/beta-SiC composite film was developed and successfully realized. The experimental details are described and the growth mechanism is discussed.
引用
收藏
页码：523 / 527
页数：5
相关论文
共 50 条
  • [41] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION
    LEARN, AJ
    HAQ, KE
    APPLIED PHYSICS LETTERS, 1970, 17 (01) : 26 - &
  • [42] EFFECT OF DEPOSITION PARAMETERS ON THE STRENGTH OF CVD BETA-SIC COATINGS
    SAIGAL, A
    DAS, N
    ADVANCED CERAMIC MATERIALS, 1988, 3 (06): : 580 - 583
  • [43] Hydrothermal synthesis of diamond from diamond-seeded beta-SiC powder
    Gogotsi, YG
    Nickel, KG
    Kofstad, P
    JOURNAL OF MATERIALS CHEMISTRY, 1995, 5 (12) : 2313 - 2314
  • [44] SINGLE-CRYSTAL BETA-SIC FILMS BY REACTIVE SPUTTERING
    HAQ, KE
    APPLIED PHYSICS LETTERS, 1975, 26 (05) : 255 - 256
  • [45] beta-SiC films on SOI substrates for high temperature applications
    Reichert, W
    Obermeier, E
    Stoemenos, J
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1448 - 1450
  • [46] STRUCTURE OF EPITAXIAL BETA-SIC FILMS AS STUDIED BY ELECTRON DIFFRACTION
    KHAN, IH
    ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1969, A 25 : S55 - &
  • [47] DIAMOND AND BETA-SIC HETEROEPITAXIAL INTERFACES - A THEORETICAL AND EXPERIMENTAL-STUDY
    ZHU, W
    WANG, XH
    STONER, BR
    MA, GHM
    KONG, HS
    BRAUN, MWH
    GLASS, JT
    PHYSICAL REVIEW B, 1993, 47 (11): : 6529 - 6542
  • [48] PREFERENTIAL RECRYSTALLIZATION OF BETA-SIC IN REACTION SINTERED SIC MATERIAL
    NOAKES, JE
    SHINOZAK.S
    SATO, H
    AMERICAN CERAMIC SOCIETY BULLETIN, 1974, 53 (04): : 392 - 392
  • [49] STRAIN EFFECTS ON THE BAND STRUCTURES OF BETA-SIC
    LU, WC
    ZHANG, KM
    XIE, XD
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) : 883 - 890
  • [50] Thermal expansion of beta-SiC, GaP and InP
    Reeber, RR
    Wang, K
    COVALENT CERAMICS III - SCIENCE AND TECHNOLOGY OF NON-OXIDES, 1996, 410 : 211 - 216
12345