THE DEPOSITION AND CHARACTERIZATION OF BETA-SIC AND DIAMOND BETA-SIC COMPOSITE FILMS

Cubic silicon carbide (beta-SiC) was deposited by a microwave plasma assisted chemical vapor deposition (MWCVD) process, using a hydrogen-tetramethylsilane (TMS) gas mixture. The conditions for preparing beta-SiC correspond well with those for diamond deposition. The necessary silicon content in the gas phase for a beta-SiC growth rate comparable with normal diamond deposition is only 1% of the carbon required for diamond growth. Based on this knowledge a method for preparing diamond/beta-SiC composite film was developed and successfully realized. The experimental details are described and the growth mechanism is discussed.