MOMENTUM CONSERVATION IN THE LUMINESCENCE OF MODULATION-DOPED GAXIN1-XAS-ALYIN1-YAS QUANTUM-WELLS

被引:0
|
作者
RINALDI, R
CINGOLANI, R
FERRARA, M
ZHANG, YH
PLOOG, K
机构
[1] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY
[2] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT QUEST,SANTA BARBARA,CA 93106
[3] PAUL DRUDE INST FKE,O-1086 BERLIN,GERMANY
[4] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
关键词
OPTICAL PROPERTIES OF THIN FILMS; SURFACES; AND THIN LAYER STRUCTURES (INCLUDING SUPERLATTICES; HETEROSTRUCTURES; AND INTERCALATION COMPOUNDS; OTHER LUMINESCENCE AND RADIATIVE RECOMBINATION;
D O I
10.1007/BF02482402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped GaxIn1-xAs-AlyIn1-yAs single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.
引用
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页码:675 / 687
页数:13
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