DETERMINATION OF THE DEGREE OF EPITAXY IN HIGH-TC THIN-FILMS BY RAMAN-SPECTROSCOPY

被引：42

作者：

THOMSEN, C

WEGERER, R

HABERMEIER, HU

CARDONA, M

机构：

[1] Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 83卷 / 03期

关键词：

D O I：

10.1016/0038-1098(92)90837-Y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A simple method is presented to determine the degree of a - b orientation of a 123 thin film and illustrated with the example of YBa2Cu3O7. The ratio of the Raman intensity of the B1g-like phonon peak under parallel and perpendicular polarizations of incident and scattered light is shown to be sufficient to yield the fraction of epitaxial orientation to simple c-axis texturing in high-T(c) films.

引用

页码：199 / 203

页数：5

共 13 条

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