OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS

被引：75

作者：

TSANG, WT ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 25期

关键词：

D O I：

10.1063/1.97266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1686 / 1688

页数：3

共 17 条

[1]

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[2]

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[3] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[4] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS [J].

ENNEN, H ;

KAUFMANN, U ;

POMRENKE, G ;

SCHNEIDER, J ;

WINDSCHEIF, J ;

AXMANN, A .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :165-168

[5] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[6] LUMINESCENCE OF THE RARE-EARTH ION YTTERBIUM IN INP, GAP, AND GAAS [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2182-2185

[7]

ENNEN H, 1985, J ELECTRON MATER A, V14, P115

[8] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J].

HAYDL, WH ;

MULLER, HD ;

ENNEN, H ;

KORBER, W ;

BENZ, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :870-872

[9]

KASATKIN VA, 1981, SOV PHYS SEMICOND+, V15, P352

[10]

KASATKIN VA, 1980, SOV PHYS SEMICOND+, V14, P1092

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