OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS

被引：75

作者：

TSANG, WT ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.97266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1686 / 1688

页数：3

共 17 条

[1] Dieke G.H., 1968, SPECTRA ENERGY LEVEL
[2] DMITRIEV AG, 1983, SOV PHYS SEMICOND+, V17, P1201
[3] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
ENNEN, H
SCHNEIDER, J
POMRENKE, G
AXMANN, A
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[4] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS
ENNEN, H
KAUFMANN, U
POMRENKE, G
SCHNEIDER, J
WINDSCHEIF, J
AXMANN, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 165 - 168
[5] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY
ENNEN, H
POMRENKE, G
AXMANN, A
EISELE, K
HAYDL, W
SCHNEIDER, J
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383
[6] LUMINESCENCE OF THE RARE-EARTH ION YTTERBIUM IN INP, GAP, AND GAAS
ENNEN, H
POMRENKE, G
AXMANN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2182 - 2185
[7] ENNEN H, 1985, J ELECTRON MATER A, V14, P115
[8] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M
HAYDL, WH
MULLER, HD
ENNEN, H
KORBER, W
BENZ, KW
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 870 - 872
[9] KASATKIN VA, 1981, SOV PHYS SEMICOND+, V15, P352
[10] KASATKIN VA, 1980, SOV PHYS SEMICOND+, V14, P1092