SILICON INTERSTITIAL GENERATION BY ARGON IMPLANTATION

被引：22
作者：
BRONNER, GB
PLUMMER, JD
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 05期
关键词：
D O I：
10.1063/1.95575
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：510 / 512
页数：3
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