HETEROEPITAXY OF INSULATOR METAL SILICON STRUCTURES - CAF2/NISI2/SI(111) AND CAF2/COSI2/SI(111)

被引：19

作者：

FATHAUER, RW

HUNT, BD

SCHOWALTER, LJ

OKAMOTO, M

HASHIMOTO, S

机构：

[1] GE,CTR CORP RES & DEV,POB 8,SCHENECTADY,NY 12301

[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.97353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：64 / 66

页数：3

共 10 条

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[3]

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[4]

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[7] GROWTH OF AN EPITAXIAL INSULATOR-METAL-SEMICONDUCTOR STRUCTURE ON SI BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1986, 48 (07) :463-465

[8] MOLECULAR-BEAM EPITAXY GROWTH AND APPLICATIONS OF EPITAXIAL FLUORIDE FILMS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1026-1032

[9] EPITAXIAL-GROWTH AND CHARACTERIZATION OF CAF2 ON SI [J].

SCHOWALTER, LJ ;

FATHAUER, RW ;

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :302-308

[10] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J].

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PHYSICAL REVIEW LETTERS, 1983, 50 (06) :429-432

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