A NOVEL GAAS SCHOTTKY-DRAIN POWER FET FOR MICROWAVE APPLICATION

被引：1
|
作者：
CALVIELLO, JA
BIE, PR
POMIAN, RJ
CAPPELLO, A
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 12期
关键词：
D O I：
10.1109/T-ED.1985.22425
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2844 / 2847
页数：4
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