SEMICONDUCTOR-DIODE LIGHT SOURCES

[31] EVIDENCE FOR AVALANCHE INJECTION LASER IN P-TYPE GAAS (BREAKDOWN OF HIGH-RESISTIVITY REGION E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 225 - &

[32] HIGH-ORDER TRANSVERSE MODES IN GAAS LASERS ( NEAR-FIELD + FAR-FIELD OPTICAL RADIATION PATTERN 77DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (06) : 115 - &

[33] WILLARDSON RK, 1966, SEMICONDUCTORS SE ED, V2, P289

[34] WILLARDSON RK, 1966, SEMICONDUCTORS ME ED, V2, P371

[35] STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (08) : 127 - 129

[31] EVIDENCE FOR AVALANCHE INJECTION LASER IN P-TYPE GAAS (BREAKDOWN OF HIGH-RESISTIVITY REGION E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 225 - &

[32] HIGH-ORDER TRANSVERSE MODES IN GAAS LASERS ( NEAR-FIELD + FAR-FIELD OPTICAL RADIATION PATTERN 77DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (06) : 115 - &

[33] WILLARDSON RK, 1966, SEMICONDUCTORS SE ED, V2, P289

[34] WILLARDSON RK, 1966, SEMICONDUCTORS ME ED, V2, P371

[35] STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (08) : 127 - 129