SEMICONDUCTOR-DIODE LIGHT SOURCES

[1] BIARD JR, 1964, T METALL SOC AIME, V230, P286

[2] P-N JUNCTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +

[3] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &

[4] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174

[5] EFFICIENT INJECTION ELECTROLUMINESCENCE IN ZNTE BY AVALANCHE BREAKDOWN - (QUANTUM EFFICIENCY 2 PERCENT AT 5380 A - 77 DEGREES K - LI-DOPED - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (06) : 148 - &

[6] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[7] DUMKE WP, ADVANCES LASERS, V2

[8] EFFICIENCY MEASUREMENTS ON GAAS ELECTROLUMINESCENT DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 295 - &

[9] ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 113 - 124

[10] GERSHENZON M, 1966, LUMINESCENCE INORGAN, pCH11

[1] BIARD JR, 1964, T METALL SOC AIME, V230, P286

[2] P-N JUNCTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +

[3] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &

[4] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174

[5] EFFICIENT INJECTION ELECTROLUMINESCENCE IN ZNTE BY AVALANCHE BREAKDOWN - (QUANTUM EFFICIENCY 2 PERCENT AT 5380 A - 77 DEGREES K - LI-DOPED - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (06) : 148 - &

[6] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[7] DUMKE WP, ADVANCES LASERS, V2

[8] EFFICIENCY MEASUREMENTS ON GAAS ELECTROLUMINESCENT DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 295 - &

[9] ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 113 - 124

[10] GERSHENZON M, 1966, LUMINESCENCE INORGAN, pCH11