KLL AUGER AND CORE-LEVEL (1S AND 2P) PHOTOELECTRON SHIFTS IN A SERIES OF GASEOUS PHOSPHORUS-COMPOUNDS

被引:69
|
作者
SODHI, RN
CAVELL, RG
机构
关键词
D O I
10.1016/0368-2048(83)80025-5
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
引用
收藏
页码:283 / 312
页数:30
相关论文
共 50 条
  • [41] Modeling of Si 2p core-level shifts at Si-(ZrO2)x(SiO2)1-x interfaces
    Giustino, F
    Bongiorno, A
    Pasquarello, A
    APPLIED PHYSICS LETTERS, 2002, 81 (22) : 4233 - 4235
  • [42] Surface core-level shifts of Si(111)7x7: a critical evaluation of the Si 2p analysis
    Le Lay, G
    Cricenti, A
    Ottaviani, C
    Hakansson, C
    Perfetti, P
    Prince, KC
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1998, 88 : 711 - 715
  • [43] Resonant Auger spectra of TiO2 at Ti 2p and O 1s absorption edges
    Ruus, R
    Saar, A
    Aarik, J
    Aidla, A
    Uustare, T
    Kikas, A
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1998, 93 (1-3) : 193 - 199
  • [44] 2p core-level binding energies of size-selected free silicon clusters: Chemical shifts and cluster structure
    Vogel, M.
    Kasigkeit, C.
    Hirsch, K.
    Langenberg, A.
    Rittmann, J.
    Zamudio-Bayer, V.
    Kulesza, A.
    Mitric, R.
    Moeller, T.
    Von Issendorff, B.
    Lau, J. T.
    PHYSICAL REVIEW B, 2012, 85 (19):
  • [45] Nitrogen incorporation at Si(001)-SiO2 interfaces:: Relation between N 1s core-level shifts and microscopic structure
    Rignanese, GM
    Pasquarello, A
    Charlier, JC
    Gonze, X
    Car, R
    PHYSICAL REVIEW LETTERS, 1997, 79 (25) : 5174 - 5177
  • [47] First-principles study of Si 2p core-level shifts at water and hydrogen covered Si(001)2x1 surfaces
    Pasquarello, A
    Hybertsen, MS
    Car, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2809 - 2811
  • [48] ELECTRONIC-STRUCTURES OF NIO, COO, AND FEO STUDIED BY 2P CORE-LEVEL X-RAY PHOTOELECTRON-SPECTROSCOPY
    LEE, G
    OH, SJ
    PHYSICAL REVIEW B, 1991, 43 (18): : 14674 - 14682
  • [49] Dissociation dynamics of excited neutral fragments of gaseous SiCl4 following Si 2p and Cl 2p core-level excitations -: art. no. 032706
    Chen, JM
    Lu, KT
    Lee, JM
    Ho, SC
    Chang, HW
    PHYSICAL REVIEW A, 2005, 72 (03):
  • [50] Atomic structure at the Si(001)-SiO2 interface:: from the interpretation of Si 2p core-level shifts to a model structure
    Bongiorno, A
    Pasquarello, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 96 (02): : 102 - 106