共 50 条
[31]
Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
2003, 42 (12)
:7184-7188
[32]
DEFECT STATES IN N-TYPE GERMANIUM IRRADIATED WITH 1.5 MEV ELECTRONS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1982, 21 (06)
:930-935
[33]
ANNEALING OF RADIATION DEFECTS IN N-TYPE SIC(6H) IRRADIATED WITH NEUTRONS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1984, 18 (11)
:1256-1259
[37]
ON THE MECHANISM OF FORMATION ON AS-GAT ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED N-TYPE GAAS
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1985, 18 (25)
:L763-L767
[38]
INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON.
[J].
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov),
1974, 8 (03)
:303-305
[40]
POSITRON-ANNIHILATION IN ELECTRON-IRRADIATED N-TYPE GAP CRYSTALS
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
1983, 79 (1-4)
:123-130