RECONSTRUCTION OF STEPS ON THE SI(111)2X1 SURFACE

被引：69
|
作者：
FEENSTRA, RM
STROSCIO, JA
机构：
来源：
PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 19期
关键词：
D O I：
10.1103/PhysRevLett.59.2173
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：2173 / 2176
页数：4
相关论文
共 50 条
  • [21] THE MOTT INSULATOR MODEL OF THE SI(111)-(2X1) SURFACE
    REDONDO, A
    GODDARD, WA
    MCGILL, TC
    SURFACE SCIENCE, 1983, 132 (1-3) : 49 - 61
  • [22] TEST OF STRUCTURAL MODELS FOR THE SI(111)2X1 SURFACE
    LIU, H
    COOK, MR
    JONA, F
    MARCUS, PM
    PHYSICAL REVIEW B, 1983, 28 (10): : 6137 - 6140
  • [23] Electrostatics and reactivity of surface defects on Si(111)-(2X1)
    Kádas, K
    Náray-Szabó, G
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 1998, 455 (2-3): : 213 - 218
  • [24] SURFACE BAND-STRUCTURE OF SI(111)2X1
    CHEN, B
    HANEMAN, D
    PHYSICAL REVIEW B, 1995, 51 (07): : 4258 - 4263
  • [25] MOTT INSULATOR MODEL OF THE SI(111)-(2X1) SURFACE
    REDONDO, A
    GODDARD, WA
    MCGILL, TC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 328 - 329
  • [26] SI(111)-(2X1) SURFACE - BUCKLING, CHAINS, OR MOLECULES
    TROMP, RM
    SMIT, L
    VANDERVEEN, JF
    PHYSICAL REVIEW LETTERS, 1983, 51 (18) : 1672 - 1675
  • [27] Band structure of the Ca/Si(111)-(2x1) surface
    Sakamoto, K
    Zhang, HM
    Uhrberg, RIG
    PHYSICAL REVIEW B, 2003, 68 (24):
  • [28] DIPOLE ACTIVITY OF SURFACE PHONONS ON SI(111)2X1
    ALERHAND, OL
    ALLAN, DC
    MELE, EJ
    PHYSICAL REVIEW LETTERS, 1985, 55 (24) : 2700 - 2703
  • [29] RECONSTRUCTION OF SEMICONDUCTOR SURFACES - SI(111)-2X1, SI(111)-7X7, AND GAAS(110)
    PANDEY, KC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 1099 - 1100
  • [30] THE EFFECT OF STEPS ON THE OXIDATION OF A CESIATED SI(100)2X1 SURFACE
    KAMARATOS, M
    KENNOU, S
    LADAS, S
    PAPAGEORGOPOULOS, CA
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (35) : 6071 - 6079
12345