CORROSION PREVENTION IN METALS USING LAYERED SEMICONDUCTOR INSULATOR STRUCTURES FORMING AN INTERFACIAL ELECTRONIC BARRIER

被引：0
作者：
JAIN, FC
ROSATO, JJ
KALONIA, KS
AGARWALA, VS
机构：
[1] USN,CTR AIR DEV,WARMINSTER,PA 18974
[2] UNIV CONNECTICUT,DEPT ELECT ENGN,STORRS,CT 06268
[3] UNIV CONNECTICUT,INST MAT SCI,STORRS,CT 06268
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1987年 / 193卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：131 / PMSE
相关论文
共 50 条
  • [31] Electronic structures of ternary-layered semiconductor TlGaSe2 investigated by photoemission spectroscopy
    Motonami, Satoru
    Mimura, Kojiro
    Shim, YongGu
    Wakita, Kazuki
    Sato, Hitoshi
    Utsumi, Yuki
    Ueda, Shigenori
    Nakatake, Masashi
    Shimada, Kenya
    Taguchi, Yukihiro
    Kobayashi, Keisuke
    Namatame, Hirofumi
    Taniguchi, Masaki
    Orudzhev, Guseyn
    Mamedov, Nazim
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 7-8, 2013, 10 (7-8): : 1001 - 1004
  • [32] METHOD FOR INVESTIGATION OF ACOUSTO-ELECTRONIC COUPLING IN MONOLITHIC LAYERED PIEZOELECTRIC-SEMICONDUCTOR STRUCTURES
    KMITA, AM
    MEDVED, AV
    MUSHKARENKO, YN
    FEDORETS, VN
    SOVIET PHYSICS ACOUSTICS-USSR, 1976, 22 (02): : 170 - 171
  • [33] Layered extrusion forming of complex ceramic structures using starch as removable support
    Yang, Li
    Tang, Shiyan
    Li, Guanjin
    Qian, Lei
    Mei, Jinkai
    Jiang, Wenming
    Fan, Zitian
    CERAMICS INTERNATIONAL, 2019, 45 (17) : 21843 - 21850
  • [34] INTERFACIAL PROPERTIES OF DIAMOND-LIKE AMORPHOUS-CARBON FILMS ON INP - METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    OH, JE
    LAMB, JD
    SNYDER, PG
    WOOLLAM, JA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1022 - 1023
  • [35] Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms
    Chim, WK
    Ng, TH
    Koh, BH
    Choi, WK
    Zheng, JX
    Tung, CH
    Du, AY
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) : 4788 - 4793
  • [36] ANOMALOUS ACOUSTOELECTRIC EFFECT IN SEMICONDUCTOR LAYERED STRUCTURES USING SEPARATED MEDIUM CONFIGURATION
    ABEDIN, MN
    STRASHILOV, VL
    DAS, P
    SOLID-STATE ELECTRONICS, 1990, 33 (01) : 65 - 68
  • [37] INSULATOR SEMICONDUCTOR INTERFACE FORMATION BY ELECTRONIC PROMOTION USING ALKALI-METAL AND REMOVAL OF THE CATALYST
    SOUKIASSIAN, P
    STARNBERG, HI
    KENDELEWICZ, T
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 395 - 401
  • [38] Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures
    Maeda, Tatsuro
    Nishizawa, Masayasu
    Morita, Yukinori
    Takagi, Shinichi
    APPLIED PHYSICS LETTERS, 2007, 90 (07)
  • [39] Using metal-insulator-semiconductor structures to investigate dielectrics charging in capacitive microelectromechanical switches
    San, Hai-sheng
    Chen, Xu-yuan
    Xu, Peng
    Li, Gang
    Zhan, Lin-xian
    APPLIED PHYSICS LETTERS, 2008, 93 (06)
  • [40] Spin-polarized light-emitting diode using metal/insulator/semiconductor structures
    Manago, T
    Akinaga, H
    APPLIED PHYSICS LETTERS, 2002, 81 (04) : 694 - 696
12345