PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER

[1] Atalla M., 1959, PROC IEE B ELECT COM, V106, P1130, DOI [10.1049/pi-b-2.1959.0204, DOI 10.1049/PI-B-2.1959.0204]

[2] VARIATION WITH FREQUENCY OF TRANSVERSE IMPEDANCE OF SEMICONDUCTOR SURFACE LAYERS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (DEC) : 1795 - &

[3] BERZ F, 1959, J ELECTRON CONTR, V6, P97

[4] HIGH-FREQUENCY RELAXATION PROCESSES IN THE FIELD-EFFECT EXPERIMENT [J]. PHYSICAL REVIEW, 1957, 107 (02): : 478 - 487

[5] FREQUENCY RESPONSE OF SURFACE INVERSION LAYER IN SILICON [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (08) : 971 - &

[6] HOFSTEIN SR, 1964, THESIS PRINCETON U

[7] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 59 - 79

[8] PEARSON GL, 1948, PHYS REV, V74, P232

[9] PFANN WG, 1959, P IRE, V47, P2011

[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[1] Atalla M., 1959, PROC IEE B ELECT COM, V106, P1130, DOI [10.1049/pi-b-2.1959.0204, DOI 10.1049/PI-B-2.1959.0204]

[2] VARIATION WITH FREQUENCY OF TRANSVERSE IMPEDANCE OF SEMICONDUCTOR SURFACE LAYERS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (DEC) : 1795 - &

[3] BERZ F, 1959, J ELECTRON CONTR, V6, P97

[4] HIGH-FREQUENCY RELAXATION PROCESSES IN THE FIELD-EFFECT EXPERIMENT [J]. PHYSICAL REVIEW, 1957, 107 (02): : 478 - 487

[5] FREQUENCY RESPONSE OF SURFACE INVERSION LAYER IN SILICON [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (08) : 971 - &

[6] HOFSTEIN SR, 1964, THESIS PRINCETON U

[7] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 59 - 79

[8] PEARSON GL, 1948, PHYS REV, V74, P232

[9] PFANN WG, 1959, P IRE, V47, P2011

[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243