PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE

被引：210
作者：
GOBELI, GW
ALLEN, FG
机构：
来源：
PHYSICAL REVIEW | 1965年 / 137卷 / 1A期
关键词：
D O I：
10.1103/PhysRev.137.A245
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：A245 / &
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